On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001)

被引：8
|
作者：
Lu, Jun [1 ]
Luo, Jun [2 ,3 ]
Zhang, Shi-Li [2 ,3 ,4 ]
Ostling, Mikael [3 ]
Hultman, Lars [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
[2] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[3] Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden
[4] Uppsala Univ, Angstrom Lab, S-75121 Uppsala, Sweden
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 10期
关键词：
annealing; electrical resistivity; epitaxial layers; nickel compounds; platinum compounds; sputter deposition; LAYERS; NISI; STABILITY; GROWTH; NICKEL; SI;
D O I：
10.1149/1.3473723
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Epitaxial Ni(Pt)Si2-y (y < 1) films readily grow upon thermal treatment of 2 nm thick Ni and Ni0.96Pt0.04 films deposited on Si(001). For annealing at 500 degrees C, the films are 5.4-5.6 nm thick with 61-70 mu cm in resistivity. At 750 degrees C, the epitaxial Ni(Pt)Si2-y films become 6.1-6.2 nm thick with a resistivity of 42-44 mu cm. Structural analysis reveals twins, facet wedges, and thickness inhomogeneities in the films grown at 500 degrees C. For higher temperature, an almost defect-free NiSi2-y film with a flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent.
引用
收藏
页码：H360 / H362
页数：3
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