On Epitaxy of Ultrathin Ni1-xPtx Silicide Films on Si(001)

被引：8

作者：

Lu, Jun ^{[1
]}

Luo, Jun ^{[2
,3
]}

Zhang, Shi-Li ^{[2
,3
,4
]}

Ostling, Mikael ^{[3
]}

Hultman, Lars ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[3] Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden

[4] Uppsala Univ, Angstrom Lab, S-75121 Uppsala, Sweden

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 10期

关键词：

annealing; electrical resistivity; epitaxial layers; nickel compounds; platinum compounds; sputter deposition; LAYERS; NISI; STABILITY; GROWTH; NICKEL; SI;

D O I：

10.1149/1.3473723

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Epitaxial Ni(Pt)Si2-y (y < 1) films readily grow upon thermal treatment of 2 nm thick Ni and Ni0.96Pt0.04 films deposited on Si(001). For annealing at 500 degrees C, the films are 5.4-5.6 nm thick with 61-70 mu cm in resistivity. At 750 degrees C, the epitaxial Ni(Pt)Si2-y films become 6.1-6.2 nm thick with a resistivity of 42-44 mu cm. Structural analysis reveals twins, facet wedges, and thickness inhomogeneities in the films grown at 500 degrees C. For higher temperature, an almost defect-free NiSi2-y film with a flat and sharp interface is formed. The presence of Pt makes the aforementioned imperfections more persistent.

引用

页码：H360 / H362

页数：3

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