共 10 条
[1]
PROBING THE CAF2 DENSITY-OF-STATES AT AU/CAF2/N-SI(111) INTERFACES WITH PHOTOELECTRON-SPECTROSCOPY AND BALLISTIC-ELECTRON-EMISSION MICROSCOPY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1994, 12 (04)
:2646-2652
[2]
GROWTH-KINETICS OF CAF2/SI(111) HETEROEPITAXY - AN X-RAY PHOTOELECTRON DIFFRACTION STUDY
[J].
PHYSICAL REVIEW B,
1995, 51 (08)
:5352-5365
[4]
GOLD SILICON INTERFACE MODIFICATION STUDIES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (02)
:585-589
[7]
DIRECT MAPPING OF THE COSI2/SI(111) INTERFACE BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND MODULATION SPECTROSCOPY
[J].
PHYSICAL REVIEW B,
1994, 50 (19)
:14714-14717
[8]
BALLISTIC ELECTRON-EMISSION SPECTROSCOPY OF METALS ON GAP(110)
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (04)
:2342-2348
[9]
Stressing and high field transport studies on device-grade SiO2 by ballistic electron emission spectroscopy
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1996, 14 (04)
:2855-2863