Near-infrared photoluminescence from ZnO

被引：101

作者：

Wang, Mingsong ^{[1
]}

Zhou, Yajun ^{[1
]}

Zhang, Yiping ^{[1
]}

Kim, Eui Jung ^{[2
]}

Hahn, Sung Hong ^{[3
,4
]}

Seong, Seung Gie ^{[5
]}

机构：

[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China

[2] Univ Ulsan, Dept Chem Engn, Ulsan 680749, South Korea

[3] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[4] Univ Ulsan, Energy Harvest Storage Res Ctr, Ulsan 680749, South Korea

[5] Ulsan Natl Inst Sci & Technol, Div Gen Studies, Ulsan 689805, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 10期

关键词：

ZINC-OXIDE; THIN-FILMS; GREEN LUMINESCENCE; NANOWIRES; DEFECTS; MECHANISM; NANORODS; EMISSION; ORIGIN;

D O I：

10.1063/1.3692584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Understanding the defect physics of ZnO is crucial in controlling its properties for various applications. We report the observation of an interesting 1.64 eV near-infrared (NIR) photoluminescence from ZnO and its evolution with annealing temperature. Based on a recent calculation on the transition levels of native point defects of ZnO [A. Janotti and C. G. Van de Walle, Phys. Rev. B 76, 165202 ( 2007)], the NIR emission can be successfully explained by the donor-acceptor transition between V-O and V-Zn and/or the radiative recombination of shallowly trapped electrons with deeply trapped holes at O-i. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692584]

引用

页数：4

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