Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

被引：6

作者：

Abhinay, S. ^{[1
]}

Arulkumaran, S. ^{[2
,3
]}

Ng, G. I. ^{[1
,2
]}

Ranjan, K. ^{[1
,2
]}

Deki, M. ^{[3
]}

Nitta, S. ^{[3
]}

Honda, Y. ^{[3
]}

Amano, H. ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Temasek Labs NTU, Res Techno Plaza,50 Nanyang Dr, Singapore 637553, Singapore

[3] Nagoya Univ, Inst Mat & Syst Sustainabil IMaSS, CIRFE, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 01期

关键词：

Organic chemicals - III-V semiconductors - Magnesium compounds - Organometallics - Electric breakdown - Gallium nitride - Metallorganic chemical vapor deposition - Activation energy;

D O I：

10.7567/1347-4065/ab65cd

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical Schottky barrier diodes (SBD) were fabricated on 1a 5 mu m thick GaN drift layer (DL) with and without Mg-compensation grown by metal organic chemical vapour deposition on free-standing hydride vapour phase epitaxy grown substrate. The SBDs with Mg-compensated DL exhibited similar to 3.4 x higher breakdown voltage (V-bd) than the SBDs with conventional DL. The activation energy of 0.43 eV from the SBD with Mg-compensated DL can be correlated to the presence of Mg. The reverse current conduction mechanism of SBDs with Mg-compensated DL and conventional DL was dominated by thermionic field emission (TFE) and barrier modified TFE, respectively.

引用

页数：5

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