The Thermoelectric Properties of n-Type Bismuth Telluride: Bismuth Selenide Alloys Bi2Te3-xSex

被引:105
作者
Witting, Ian T. [1 ]
Ricci, Francesco [2 ]
Chasapis, Thomas C. [1 ]
Hautier, Geoffroy [2 ]
Snyder, G. Jeffrey [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, 2220 Campus Dr,Cook Hall 2036, Evanston, IL 60208 USA
[2] Catholic Univ Louvain, Inst Condensed Matter & Nanosci, B-1348 Louvain La Neuve, Belgium
基金
美国国家航空航天局;
关键词
SHUBNIKOV-DE-HAAS; CONDUCTION-BAND; TRANSPORT-PROPERTIES; SOLID-SOLUTIONS; TOPOLOGICAL INSULATORS; ELECTRONIC-STRUCTURE; PHYSICAL-PROPERTIES; OPTICAL-PROPERTIES; SINGLE-CRYSTALS; VAN-ALPHEN;
D O I
10.34133/2020/4361703
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Alloying bismuth telluride with antimony telluride and bismuth selenide for p- and n-type materials, respectively, improves the thermoelectric quality factor for use in room temperature modules. As the electronic and thermal transports can vary substantially, the alloy composition is a key engineering parameter. The n-type Bi2Te3-xSex alloy lags its p-type counterpart in thermoelectric performance and does not lend itself as readily to simple transport modeling which complicates engineering. Combining literature data with recent results across the entire alloy composition range, the complex electronic structure dynamics and trends in lattice thermal conductivity are explored. Spin-orbit interaction plays a critical role in determining the position and degeneracy of the various conduction band minima. This behavior is incorporated into a two-band effective mass model to estimate the transport parameters in each band. An alloy scattering model is utilized to demonstrate how phonon scattering behaves differently on either side of the intermediate ordered compound Bi2Te2Se due to chalcogen site occupancy preference. The parametrization of the electronic and thermal transports presented can be used in future optimization efforts.
引用
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页数:15
相关论文
共 106 条
[1]  
26Heremans J.P., 2016, MAT ASPECT THERMOELE, P39
[2]   TRANSPORT PROPERTIES OF BI2TE3 [J].
ASHWORTH, HA ;
RAYNE, JA ;
URE, RW .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08) :2646-&
[3]  
Austin I.G., 1957, J ELECT CONTROL, V3, P236
[4]   THE OPTICAL PROPERTIES OF BISMUTH TELLURIDE [J].
AUSTIN, IG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (466) :545-552
[5]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[6]   Alloy scattering in AlGaN and InGaN: A numerical study [J].
Bellotti, Enrico ;
Bertazzi, Francesco ;
Goano, Michele .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
[7]  
BIRKHOLZ U, 1958, Z NATURFORSCH PT A, V13, P780
[8]   CRYSTAL STRUCTURE OF BI2TE2SE [J].
BLAND, JA ;
BASINSKI, SJ .
CANADIAN JOURNAL OF PHYSICS, 1961, 39 (07) :1040-&
[9]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[10]   Solid state demixing in Bi2Se3-Bi2Te3 and Bi2Se3-In2Se3 phase diagrams [J].
Bouanani, HG ;
Eddike, D ;
Liautard, B ;
Brun, G .
MATERIALS RESEARCH BULLETIN, 1996, 31 (02) :177-187