Uniaxially oriented polycrystalline thin films and air-stable n-type transistors based on donor-acceptor semiconductor (diC8BTBT)(FnTCNQ) [n=0, 2, 4]

被引：40

作者：

Shibata, Yosei ^{[1
]}

Tsutsumi, Jun'ya ^{[2
]}

Matsuoka, Satoshi ^{[2
]}

Matsubara, Koji ^{[1
]}

Yoshida, Yuji ^{[1
]}

Chikamatsu, Masayuki ^{[1
]}

Hasegawa, Tatsuo ^{[2
,3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta Technol, Tsukuba, Ibaraki 3058565, Japan

[2] Natl Inst Adv Ind Sci & Technol, Flexible Elect Res Ctr, Tsukuba, Ibaraki 3058562, Japan

[3] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 14期

关键词：

FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTORS;

D O I：

10.1063/1.4918288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication of high quality thin films for semiconducting organic donor-acceptor charge-transfer (CT) compounds, (diC(8)BTBT)(F(n)TCNQ) (diC(8)BTBT = 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene and F(n)TCNQ [n = 0,2,4] = fluorinated derivatives of 7,7,8, 8,-tetracyanoquinodimethane), which have a high degree of layered crystallinity. Single-phase and uniaxially oriented polycrystalline thin films of the compounds were obtained by co- evaporation of the component donor and acceptor molecules. Organic thin- film transistors (OTFTs) fabricated with the compound films exhibited n-type field- effect characteristics, showing a mobility of 6.9 x 10(-2) cm(2)/V s, an on/off ratio of 10(6), a sub-threshold swing of 0.8 V/dec, and an excellent stability in air. We discuss the suitability of strong intermolecular donor-acceptor interaction and the narrow CT gap nature in compounds for stable n-type OTFT operation. (C) 2015 AIP Publishing LLC.

引用

页数：4

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