Electrical and photoelectrical properties of heterojunctions on the base of Cu(InGa)Se2

被引：0

作者：

Ketrush, P ^{[1
]}

Gashin, P ^{[1
]}

Nikorich, V ^{[1
]}

Suman, V ^{[1
]}

机构：

[1] Moldova State Univ, Fac Phys, Kishinev 2009, Moldova

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 02期

关键词：

solar cells; heterojunction; electrical and photoelectrical properties;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdS films deposited by hot wall technique on mica were used as substrates for Cu(InGa)Se-2 deposition. Two methods were used for the deposition of Cu(InGa)Se2 films: a) vacuum thermal evaporation from a single source and b) "flash" evaporation. The obtained films were of p-type conductivity with hole concentration varied from 2x 10(18) cm(-3) to 6x10(20) cm(-3) depending on the fabrication method. The structures Cu(InGa)Se-2-CdS were divided into two groups: the structures of type I having the CdS film thickness from 1.6 mu m to 2.8 mu m and the structures of type II having the CdS film thickness from 0.6 mu m to 0.8 mu m. It was established that the direct/reverse current ratio is 8-16. For the first type heterostructures the diffusion potential is 1.2-1.8 V and for the second type is 0.2-0.34 V. The Cu(InGa)Sc2CdS fotosensitivity is situated in the wavelength region from 0.51 mu m to 1.1 mu m and is determined by the electron-hole pair generation in both materials.

引用

页码：795 / 800

页数：6