Quantum-well Intermixing Process for Large Blueshifting in an Ion-implanted InGaAs/InGaAsP Multiple-quantum-well Structure Using Two-step Annealing

被引：4

作者：

Byun, Young Tae ^{[1
]}

Jhon, Young Min ^{[1
]}

Kim, Sun Ho ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Photon Sensor Syst Ctr, Seoul 136791, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 57卷 / 05期

关键词：

Quantum well; Implantation; Anneal; III-IV compound semiconductor; Optoelectronic; DIFFUSION;

D O I：

10.3938/jkps.57.1189

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe studies on implantation-enhanced quantum-well intermixing in a lattice-matched InGaAs/InGaAsP multiple-quantum-well p-i-n heterostructure. Samples are implanted with a dose of 5 x 10(14) P(+) ions /cm(2) at a high energy of 1 MeV. The band gaps in the samples are determined from the photoluminescence at room temperature. The Rapid Thermal Annealing (RTA) process is carried out at 675 C for 9 minutes, and the blue-shift of the band gap is as large as 107 nm. However, the band shift is improved to 140 nin when a novel two-step annealing process is conducted at 675 degrees C (9 min) and at 875 degrees C (1 min) in sequence.

引用

页码：1189 / 1192

页数：4

共 11 条

[1]

BYUN YT, 2006, SAE MULLI, V53, P331

[2] BAND-GAP TUNING OF INGAAS/INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION [J].

CHARBONNEAU, S ;

POOLE, PJ ;

FENG, Y ;

AERS, GC ;

DION, M ;

DAVIES, M ;

GOLDBERG, RD ;

MITCHELL, IV .

APPLIED PHYSICS LETTERS, 1995, 67 (20) :2954-2956

[3] ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].

DEPPE, DG ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113

[4] Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing [J].

McKee, A ;

McLean, CJ ;

Lullo, G ;

Bryce, AC ;

DelaRue, RM ;

Marsh, JH ;

Button, CC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (01) :45-55

[5] Demonstration of widely tunable single-chip 10-Gb/s laser-modulators using multiple-bandgap InGaAsP quantum-well intermixing [J].

Raring, JW ;

Skogen, EJ ;

Johansson, LA ;

Sysak, MN ;

Barton, JS ;

Masanoviæ, ML ;

Coldren, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (07) :1613-1615

[6]

Si SK, 1998, IEEE J SEL TOP QUANT, V4, P619, DOI 10.1109/2944.720471

[7]

SKAGEN EJ, 2005, APPL PHYS LETT, V86

[8] A quantum-well-intermixing process for wavelength-agile photonic integrated circuits [J].

Skogen, EJ ;

Barton, JS ;

Denbaars, SP ;

Coldren, LA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :863-869

[9] Dual-wavelength laser source monolithically integrated with Y-junction coupler and isolator using quantum-well intermixing [J].

Teng, JH ;

Chua, SJ ;

Zhang, ZH ;

Huang, YH ;

Li, G ;

Wang, ZJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (10) :1310-1312

[10] HIGH-SPEED AND LOW-DRIVE-VOLTAGE MONOLITHIC MULTIPLE QUANTUM-WELL MODULATOR DFB LASER-LIGHT SOURCE [J].

WAKITA, K ;

KOTAKA, I ;

ASAI, H ;

OKAMOTO, M ;

KONDO, Y ;

NAGANUMA, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (01) :16-18

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