High-bandwidth, high-sampling-rate, low-noise, two-probe transient photovoltage measuring system

被引:6
作者
Chen, Xiaoqing [1 ,2 ]
Wu, Bo [3 ,4 ]
机构
[1] Fudan Univ, Minist Educ, Key Lab Micro & Nano Photon Struct, Shanghai 200433, Peoples R China
[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
[3] Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong, Peoples R China
[4] Hong Kong Baptist Univ, Inst Adv Mat, Kowloon Tong, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
SUBPICOSECOND; SPECTROSCOPY; TRANSPORT; INJECTION; STATES; CELL;
D O I
10.1063/1.4905576
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In this article, we present a two-probe configuration for measuring transient photovoltage (TPV) signals from photo-electronic semiconductor devices. Unlike in a conventional one-probe system, the two electrodes of the devices under test in this study are both monitored in our new measuring system, giving rise to a significantly enhanced signal-to-noise ratio. Tentative experimental data obtained from N, N'-Di(1-naphthyl)-N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine-based organic semiconductor devices show that the bandwidth and the sampling rate of the system reach 1.5 GHz and 50 GS/s, respectively, without degradation of the noise level. In addition, the study of TPV signals on each individual electrode is allowed. The TPV values measured by the two individual probes are not identically equal to half of the differential TPV and will not cancel each other out as expected. This abnormal phenomenon is due to the photoelectric response of the photo-electronic material. This novel two-probe TPV measuring technique and abnormal TPV behavior might be useful for studying more dynamic processes in photo-electronic semiconductors. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:6
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共 19 条
[1]   SUBPICOSECOND CARRIER TRANSPORT IN GAAS SURFACE-SPACE-CHARGE FIELDS [J].
DEKORSY, T ;
PFEIFER, T ;
KUTT, W ;
KURZ, H .
PHYSICAL REVIEW B, 1993, 47 (07) :3842-3849
[2]   High precision differential measurement of surface photovoltage transients on ultrathin CdS layers [J].
Dittrich, Th. ;
Boenisch, S. ;
Zabel, P. ;
Dube, S. .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2008, 79 (11)
[3]   Photovoltage in nanocrystalline porous TiO2 -: art. no. 075204 [J].
Duzhko, V ;
Timoshenko, VY ;
Koch, F ;
Dittrich, T .
PHYSICAL REVIEW B, 2001, 64 (07) :752041-752047
[4]   Trap states of tris-8-(hydroxyquinoline) aluminum and naphthyl-substituted benzidine derivative using thermally stimulated luminescence [J].
Forsythe, EW ;
Morton, DC ;
Tang, CW ;
Gao, YL .
APPLIED PHYSICS LETTERS, 1998, 73 (11) :1457-1459
[5]   AN ALL-ORGANIC SOFT THIN-FILM TRANSISTOR WITH VERY HIGH CARRIER MOBILITY [J].
GARNIER, F ;
HOROWITZ, G ;
PENG, XH ;
FICHOU, D .
ADVANCED MATERIALS, 1990, 2 (12) :592-594
[6]   DIRECT OBSERVATION OF ELECTRON CATION GEMINATE PAIR PRODUCED BY PICOSECOND LASER-PULSE EXCITATION IN NONPOLAR SOLVENT - EXCITATION WAVELENGTH DEPENDENCE OF THE ELECTRON THERMALIZATION LENGTH [J].
HIRATA, Y ;
MATAGA, N .
JOURNAL OF PHYSICAL CHEMISTRY, 1991, 95 (04) :1640-1644
[7]   Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode [J].
Hung, LS ;
Tang, CW ;
Mason, MG .
APPLIED PHYSICS LETTERS, 1997, 70 (02) :152-154
[8]   Dark injection transient spectroscopy and density of states in amorphous organics [J].
Juric, Ivan ;
Tutis, Eduard .
ORGANIC ELECTRONICS, 2014, 15 (01) :226-239
[9]   Charge carrier mobility in regioregular poly(3-hexylthiophene) probed by transient conductivity techniques:: A comparative study -: art. no. 035214 [J].
Mozer, AJ ;
Sariciftci, NS ;
Pivrikas, A ;
Osterbacka, R ;
Juska, G ;
Brassat, L ;
Bässler, H .
PHYSICAL REVIEW B, 2005, 71 (03)
[10]   Sub-picosecond and picosecond dynamics in the S1 state of [2,2′-bipyridyl]-3,3′-diol investigated by UV-visible transient absorption spectroscopy [J].
Neuwahl, FVR ;
Foggi, P ;
Brown, RG .
CHEMICAL PHYSICS LETTERS, 2000, 319 (1-2) :157-163