Low MOCVD growth temperature controlled phase transition of Ga2O3 films for ultraviolet sensing

被引：22

作者：

Yue, Jianying ^{[1
]}

Ji, Xueqiang ^{[1
]}

Qi, Xiaohui ^{[1
]}

Li, Shan ^{[1
,2
]}

Yan, Zuyong ^{[1
]}

Liu, Zeng ^{[2
]}

Li, Peigang ^{[1
]}

Wu, Zhenping ^{[1
]}

Guo, Yufeng ^{[2
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Sci, Lab Informat Funct Mat & Devices, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Natl & Local Joint Engn Lab RF Integrat & Micropac, Nanjing 210023, Peoples R China

来源：

VACUUM | 2022年 / 203卷

基金：

中国国家自然科学基金;

关键词：

Ga2O3 ??????; Growth temperature; Phase transition; MOCVD; Photodetector; OPTICAL-PROPERTIES; GALLIUM OXIDE; BETA-PHASE; BETA-GA2O3; PRESSURE; ENERGY; KAPPA; SITU;

D O I：

10.1016/j.vacuum.2022.111270

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influences of low growth temperatures (420-490 ?) on phase transition of Ga2O3 films grown on Al2O3 substrates by means of metal-organic chemical vapor deposition (MOCVD) are investigated here. The changes of crystal structure, phase composition, surface and cross-sectional morphologies are carried out by X-ray diffraction, atomic force microscope and field-emission scanning electron microscope to reveal the detail evolution from epsilon-phase to beta-phase in Ga2O3 films. The fluctuant Gibbs free energy change relying on growth temperature induces different growth mechanism of Ga2O3 films. Furthermore, the ultraviolet photoresponse properties of different phase compositions for Ga2O3 films are compared by constructing metal-semiconductor-metal photodetectors. It is found that mixture phase Ga2O3 films express better photodetection performance than pure phase Ga2O3 films due to the formation of built-in field within phase junction. This proposed regulation principle of Ga2O3 phase transition provides a new route to high-performance photoelectric material.

引用

页数：7

共 52 条

[41] Scalable manufacture of verticalp-GaN/n-SnO2heterostructure for self-powered ultraviolet photodetector, solar cell and dual-color light emitting diode [J].

Su, Longxing ;

Zuo, Yuqing ;

Xie, Jin .

INFOMAT, 2021, 3 (05) :598-610

[42] HCI Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD [J].

Sun, Haiding ;

Li, Kuang-Hui ;

Castanedo, C. G. Tones ;

Okur, Serdal ;

Tompa, Gary S. ;

Salagaj, Tom ;

Lopati, Sergei ;

Genovese, Alessandro ;

Li, Xiaohang .

CRYSTAL GROWTH & DESIGN, 2018, 18 (04) :2370-2376

[43] OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF AMORPHOUS GERMANIUM [J].

TAUC, J ;

GRIGOROVICI, R ;

VANCU, A .

PHYSICA STATUS SOLIDI, 1966, 15 (02) :627-+

[44] Preliminary study for the effects of temperatures on optoelectrical properties of β-Ga2O3 thin films [J].

Wang, Xia ;

Liu, Zeng ;

Zhi, Yusong ;

Li, Shan ;

Wu, Zhenping ;

Li, Peigang ;

Tang, Weihua .

VACUUM, 2019, 166 :79-83

[45] Photocatalytic Overall Water Splitting Promoted by an α-β phase Junction on Ga2O3 [J].

Wang, Xiang ;

Xu, Qian ;

Li, Mingrun ;

Shen, Shuai ;

Wang, Xiuli ;

Wang, Yaochuan ;

Feng, Zhaochi ;

Shi, Jingying ;

Han, Hongxian ;

Li, Can .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2012, 51 (52) :13089-13092

[46] Vertical α/β-Ga2O3 phase junction nanorods array with graphene-silver nanowire hybrid conductive electrode for high-performance self-powered solar-blind photodetectors [J].

Wu, C. ;

He, C. ;

Guo, D. ;

Zhang, F. ;

Li, P. ;

Wang, S. ;

Liu, A. ;

Wu, F. ;

Tang, W. .

MATERIALS TODAY PHYSICS, 2020, 12 (12)

[47] Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition [J].

Xia, Xiaochuan ;

Chen, Yuanpeng ;

Feng, Qiuju ;

Liang, Hongwei ;

Tao, Pengcheng ;

Xu, Mengxiang ;

Du, Guotong .

APPLIED PHYSICS LETTERS, 2016, 108 (20)

[48] Atomic structure, electronic states, and optical properties of epitaxially grown β-Ga2O3 layers [J].

Zatsepin, D. A. ;

Boukhvalov, D. W. ;

Zatsepin, A. F. ;

Kuznetsova, Yu A. ;

Gogova, D. ;

Shur, V. Ya ;

Esin, A. A. .

SUPERLATTICES AND MICROSTRUCTURES, 2018, 120 :90-100

[49] Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition [J].

Zhang, F. B. ;

Saito, K. ;

Tanaka, T. ;

Nishio, M. ;

Guo, Q. X. .

JOURNAL OF CRYSTAL GROWTH, 2014, 387 :96-100

[50] Phase Transition of Two-Dimensional β-Ga2O3 Nanosheets from Ultrathin γ-Ga2O3 Nanosheets and Their Photocatalytic Hydrogen Evolution Activities [J].

Zhang, Xiaoyan ;

Huang, Huijuan ;

Zhang, Yingguang ;

Liu, Dan ;

Tong, Na ;

Lin, Jinjin ;

Chen, Lu ;

Zhang, Zizhong ;

Wang, Xuxu .

ACS OMEGA, 2018, 3 (10) :14469-14476

← 1 2 3 4 5 6 →