Low MOCVD growth temperature controlled phase transition of Ga2O3 films for ultraviolet sensing

被引：22

作者：

Yue, Jianying ^{[1
]}

Ji, Xueqiang ^{[1
]}

Qi, Xiaohui ^{[1
]}

Li, Shan ^{[1
,2
]}

Yan, Zuyong ^{[1
]}

Liu, Zeng ^{[2
]}

Li, Peigang ^{[1
]}

Wu, Zhenping ^{[1
]}

Guo, Yufeng ^{[2
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Sci, Lab Informat Funct Mat & Devices, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Natl & Local Joint Engn Lab RF Integrat & Micropac, Nanjing 210023, Peoples R China

来源：

VACUUM | 2022年 / 203卷

基金：

中国国家自然科学基金;

关键词：

Ga2O3 ??????; Growth temperature; Phase transition; MOCVD; Photodetector; OPTICAL-PROPERTIES; GALLIUM OXIDE; BETA-PHASE; BETA-GA2O3; PRESSURE; ENERGY; KAPPA; SITU;

D O I：

10.1016/j.vacuum.2022.111270

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influences of low growth temperatures (420-490 ?) on phase transition of Ga2O3 films grown on Al2O3 substrates by means of metal-organic chemical vapor deposition (MOCVD) are investigated here. The changes of crystal structure, phase composition, surface and cross-sectional morphologies are carried out by X-ray diffraction, atomic force microscope and field-emission scanning electron microscope to reveal the detail evolution from epsilon-phase to beta-phase in Ga2O3 films. The fluctuant Gibbs free energy change relying on growth temperature induces different growth mechanism of Ga2O3 films. Furthermore, the ultraviolet photoresponse properties of different phase compositions for Ga2O3 films are compared by constructing metal-semiconductor-metal photodetectors. It is found that mixture phase Ga2O3 films express better photodetection performance than pure phase Ga2O3 films due to the formation of built-in field within phase junction. This proposed regulation principle of Ga2O3 phase transition provides a new route to high-performance photoelectric material.

引用

页数：7

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