Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

被引：23

作者：

Chen, Zhaoying ^{[1
]}

Zheng, Xiantong ^{[1
]}

Li, Zhilong ^{[1
]}

Wang, Ping ^{[1
]}

Rong, Xin ^{[1
]}

Wang, Tao ^{[1
]}

Yang, Xuelin ^{[1
]}

Xu, Fujun ^{[1
]}

Qin, Zhixin ^{[1
]}

Ge, Weikun ^{[1
]}

Shen, Bo ^{[1
,2
]}

Wang, Xinqiang ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 06期

基金：

中国国家自然科学基金;

关键词：

GAN; GROWTH;

D O I：

10.1063/1.4960765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a 23.4% improvement of conversion efficiency in solar cells based on InGaN/GaN multiple quantum wells by using a patterned sapphire substrate in the fabrication process. The efficiency enhancement is due to the improvement of the crystalline quality, as proven by the reduction of the threading dislocation density. More importantly, the better crystalline quality leads to a positive photovoltaic efficiency temperature coefficient up to 423 K, which shows the property and advantage of wide gap semiconductors like InGaN, signifying the potential of III-nitride based solar cells for high temperature and concentrating solar power applications. Published by AIP Publishing.

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