Influence of sputtering conditions on the properties of aluminum-doped zinc oxide thin film fabricated using a facing target sputtering system

被引：17
|
作者：
Lee, Moonyoung [1 ]
Park, Yongseo [1 ]
Kim, Kyunghwan [1 ]
Hong, Jeongsoo [1 ]
机构：
[1] Gachon Univ, Dept Elect Engn, 1342 Seongnamdaero, Seongnam 13120, Gyeonggi, South Korea
来源：
THIN SOLID FILMS | 2020年 / 703卷
基金：
新加坡国家研究基金会;
关键词：
Aluminum-doped zinc oxide; Transparent conductivity oxide; Thin film; Facing target sputtering system; ZNO; TEMPERATURE; RF; THICKNESS; POWER;
D O I：
10.1016/j.tsf.2020.137980
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, aluminum-doped zinc oxide thin films are deposited on a glass substrate using a facing target sputtering system, as a function of film thickness and input power, to study their crystallographic, optical, and electrical properties at various sputtering conditions. X-ray crystallography results revealed a (002) peak at approximately 34 degrees with the highest intensity. The 200 nm film deposited at 100 W exhibited high crystallinity, the highest transmittance (92%), and lowest resistivity (1.4 x 10(-3) Omega cm).
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页数：7
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