Mechanical properties of thin films of hydrogenated silicon and their relationship with microstructure

被引:1
作者
Wang, Quan [1 ,2 ]
Hu, Ran [2 ]
Ding, Jianning [2 ]
Jiang, Liyun [2 ]
机构
[1] Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
[2] Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 105卷 / 01期
关键词
AMORPHOUS-SILICON; CONDUCTION MECHANISM; NANOCRYSTALS; MODULUS; SIZE;
D O I
10.1007/s00339-011-6470-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of hydrogenated silicon were deposited on glass and single-crystalline silicon substrates using a capacitively coupled radio-frequency plasma-enhanced vapor-deposition system with the help of direct-current bias stimulation. Micro-Raman scattering was applied to investigate the microstructure of the thin films obtained. The crystalline volume fraction, X (c), was obtained from the Raman spectra. Microscopic mechanical characterization of the thin films was carried out by nanoindentation based on the conventional depth-sensing indentation method. An analytical relation between X (c) and the elastic modulus was thereby established. The elastic modulus of the film on a glass substrate was found to be lower than that of the film on a monocrystalline silicon substrate with the same X (c). The grain size of a phosphorus-doped thin film was smaller than that of the intrinsic one, with greater ordering of the grains and X (c) was found to be usually above 40%. A film with boron doping was on the opposite side, with X (c) usually below 40%. In the phosphorus-doped, intrinsic, and boron-doped films, the elastic moduli were lower when the X (c) values were 45%, 30%, and 15%, respectively.
引用
收藏
页码:153 / 159
页数:7
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