Ion implantation effects on the microhardness and microstructure of GaN

被引：8

作者：

Kavouras, P ^{[1
]}

Katsikini, M ^{[1
]}

Vouroutzis, N ^{[1
]}

Lioutas, CB ^{[1
]}

Paloura, EC ^{[1
]}

Antonopoulos, J ^{[1
]}

Karakostas, T ^{[1
]}

机构：

[1] Aristotelian Univ Salonika, Dept Phys, GR-54006 Salonika, Greece

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 3-4期

关键词：

atomic force microscopy; implantation; microhardness; near edge X-ray absorption fine structure; nitrides;

D O I：

10.1016/S0022-0248(01)01255-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We study the effect of N+ and O+ implantation on the microhardness and the microstructure of epitaxially grown GaN. The microhardness is measured using a Knoop diamond indenter while information on the effect of implantation on the surface morphology, microstructure and electronic structure is provided by atomic force microscopy, cross-section transmission electron microscopy and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It is demonstrated that implantation increases the surface microhardness. A possible mechanism for the surface hardening effect is based on the formation of N interstitials that pin the dislocations and prohibit the plastic deformation. In addition to the hardening effect, the implantation induced N interstitials introduce a characteristic resonance in the NEXAFS spectra, at 1.4eV below the absorption edge. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：454 / 458

页数：5

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