Growth of Sn Doped ZnO Nanobelts and Their Properties

被引：0

作者：

Tiong, T. Y. ^{[1
]}

Ismardi, Abrar ^{[2
]}

Dee, C. F.

Yahaya, M. ^{[1
,2
]}

Majlis, B. Yeop ^{[2
]}

机构：

[1] Univ Kebangsaan Malaysia, Fac Sci & Technol, Sch Appl Phys, Bangi 43600, Selangor, Malaysia

[2] Univ Kebangsaan Malaysia, lnst Microengn & Nanotechnol, Bangi 43600, Selangor, Malaysia

来源：

ENABLING SCIENCE AND NANOTECHNOLOGY | 2011年 / 1341卷

关键词：

ZnO; Sn doped ZnO; Nanobelts; Electrical properties; Optical property; OPTICAL-PROPERTIES; SIZE QUANTIZATION; ITO SUBSTRATE; GAS SENSOR; AL; THIN; SEMICONDUCTOR; NANOWIRES; FILMS;

D O I：

10.1063/1.3586966

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Sn doped ZnO nanobelts (NBs) have been synthesized by using thermal evaporation method. Sn powder was mixed with the ZnO and graphite powder as the growth reactant for obtaining Sn doped ZnO NBs. It was prepared under nitrogen ambient at temperature 1000 C. The NBs formed were examined with X-ray diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM). Current-Voltage (I-V) curve of grown NBs and p-n junction was measured in a dark environment with forward and reverse biases. Optical property of the NBs was characterized by UV-Visible spectrometer.

引用

页码：114 / +

页数：3

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