Thermoelectric properties of Cu-doped n-type (Bi2Te3)0.9-(Bi2-xCuxSe3)0.1(x=0-0.2) alloys

被引:54
作者
Cui, J. L. [1 ]
Mao, L. D. [1 ,2 ]
Yang, W. [1 ]
Xu, X. B. [1 ]
Chen, D. Y. [3 ]
Xiu, W. J. [1 ,3 ]
机构
[1] Ningbo Univ Technol, Sch Mech Engn, Ningbo 315016, Peoples R China
[2] Zhejiang Univ Technol, Coll Chem Engn & Mat Sci, Hangzhou 310014, Peoples R China
[3] China Univ Mining & Technol, Sch Mat Sci & Engn, Xuzhou 221008, Peoples R China
关键词
thermoelectric property; n-type (Bi2Te3)(0.9)-(Bi2-xCuxSe3)(0.1) alloys; Rietveld analysis;
D O I
10.1016/j.jssc.2007.10.013
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
n-Type (Bi2Te3)(0.9)-(Bi2-xCuxSe3)(0.1) (x = 0-0.2) alloys with Cu substitution for Bi were prepared by spark plasma-sintering technique and their structural and thermoelectric properties were evaluated. Rietveld analysis reveals that approximate 9.0% of Bi atomic sites are occupied by Cu atoms and less than 4.0 wt% second phase Cu2.86Te2 precipitated in the Cu-doped parent alloys. Measurements show that an introduction of a small amount of Cu (x <= 0.1) can reduce the lattice thermal conductivity (kappa(L)), and improve the electrical conductivity and Seebeck coefficient. An optimal dimensionless figure of merit (ZT) value of 0.98 is obtained for x = 0. 1 at 417 K, which is obviously higher than those of Cu-free Bi2Se0.3Te2.7 (ZT = 0.66) and Ag-doped alloys (ZT = 0.86) prepared by the same technologies. (c) 2007 Elsevier Inc. All rights reserved.
引用
收藏
页码:3583 / 3587
页数:5
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