Review of Ga2O3-based optoelectronic devices

被引:395
作者
Guo, D. [1 ,2 ,3 ,4 ]
Guo, Q. [3 ]
Chen, Z. [5 ]
Wu, Z. [5 ]
Li, P. [5 ]
Tang, W. [5 ]
机构
[1] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Hangzhou 310018, Peoples R China
[2] Zhejiang Sci Tech Univ, Key Lab Opt Field Manipulat Zhejiang Prov, Hangzhou 310018, Peoples R China
[3] Saga Univ, Dept Elect & Elect Engn, Synchrotron Light Applicat Ctr, Sage 8408502, Japan
[4] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[5] Beijing Univ Posts & Telecommun, Sch Sci, State Key Lab Informat Photon & Opt Commun & Info, Beijing 100876, Peoples R China
基金
中国国家自然科学基金;
关键词
Electroluminescent devices; Gallium oxide; Phosphors; Photodetectors; Polymorphs; SOLAR-BLIND PHOTODETECTORS; BETA-GA2O3; THIN-FILMS; GALLIUM OXIDE-FILMS; RESISTIVE SWITCHING CHARACTERISTICS; OPTICAL-PROPERTIES; SINGLE-CRYSTALS; ULTRAVIOLET PHOTODETECTOR; PHOTOLUMINESCENCE PROPERTIES; ELECTROLUMINESCENT DEVICES; DOPED BETA-GA2O3;
D O I
10.1016/j.mtphys.2019.100157
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gallium oxide (Ga2O3), with an ultrawide-bandgap of similar to 4.9 eV, has attracted recently much scientific and technological attention due to its extensive future applications in power electronics (field effect transistors, Schottky barrier diodes), optoelectronics (phosphors and electroluminescent [EL] devices, solarblind photodetectors), memory (spintronic devices, resistance random access memory devices), sensing systems (gas sensors, nuclear radiation detectors), and so on. Ga2O3 has six different polymorphs, known as alpha, beta, gamma, delta, epsilon, and K. Each of these polymorphs has unique physical properties and can be widely used in various fields of devices. Among them, beta-Ga2O3 has been the most widely studied and utilized due to its excellent chemical and thermal stability. Herein, we provide a review on Ga2O3-based optoelectronics, with a detailed introduction of the phosphors and EL devices and a concise summary of solar-blind photodetectors. We classify the currently reported phosphors and EL devices based on Ga2O3 undoped and doped with various elements (Eu, Er, Tm, Mn, Nd, Tb, Cr), and sort out the latest progresses of Ga2O3 based solar-blind photodetectors in various forms that include bulk single crystal, nanostructures, thin films with various device structure of metal-semiconductor-metal structure, Schottky junctions, heterojunctions, and pn junctions. Finally, conclusions and future perspectives for Ga2O3 based optoelectronic devices are presented. (C) 2019 Elsevier Ltd. All rights reserved.
引用
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页数:19
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