Cu(In,Ga)(Se,S)2 solar cell research in Solar Frontier: Progress and current status

被引：149

作者：

Kato, Takuya ^{[1
]}

机构：

[1] Solar Frontier KK, Atsugi Res Ctr, Atsugi, Kanagawa 2430206, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 04期

关键词：

BAND ALIGNMENTS; DEFECT ENERGIES; BUFFER LAYERS; EFFICIENCY; SURFACE; CHALCOPYRITE; PERFORMANCE; IMPROVEMENT;

D O I：

10.7567/JJAP.56.04CA02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

As the largest manufacturer of Cu(In,Ga)(Se,S)(2) (CIGS) thin-film photovoltaic modules with more than 1GW/year production volume, Solar Frontier K.K. has continuously improved module performance and small-area cell efficiencies in the laboratory. Because of our low-cost and environmentally-friendly process, Solar Frontier's CIGS is a promising technology for the mass production of photovoltaic modules to fill ever-increasing demand. Recently we have achieved certified efficiencies of 22.3 and 22.0% on CdS-buffered and Cd-free buffered small-area cells, respectively, as well as 18.6% on a Cd-free mini-module. In this paper, a review of our CIGS technology and recent progress on the development of the module and the small-area cell is presented. (C) 2017 The Japan Society of Applied Physics

引用

页数：8

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