Optimization of MOVPE growth for 650 nm-emitting VCSELs

被引：22

作者：

Bhattacharya, A ^{[1
]}

Zorn, M ^{[1
]}

Oster, A ^{[1
]}

Nasarek, M ^{[1
]}

Wenzel, H ^{[1
]}

Sebastian, J ^{[1
]}

Weyers, M ^{[1
]}

Tränkle, G ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztechn, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷 / 1-4期

关键词：

MOVPE; red VCSEL; Bragg reflector;

D O I：

10.1016/S0022-0248(00)00796-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper reports on the optimization of the growth of visible-wavelength vertical-cavity surface-emitting laser (VCSEL) diodes by metalorganic vapour-phase epitaxy (MOVPE). The VCSEL structure has an GaInP/AlGaInP quantum well active zone (AZ) sandwiched between AlGaAs/AlAs distributed Bragg reflectors (DBRs). We present results on the optimization of the DBR reflectivity and the electrical resistance of the p-DBR and discuss the switching sequence at the AZ to p-DBR interface which is critical due to the change of the group V component. Using these optimized parameters 640-655 nm emitting VCSELs could be demonstrated, with a minimum threshold current density of 2.8 kA/cm(2) at 654 nm. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：663 / 667

页数：5

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