Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements

被引：21

作者：

Nakamura, H ^{[1
]}

Nishikawa, S ^{[1
]}

Kohmoto, S ^{[1
]}

Kanamoto, K ^{[1
]}

Asakawa, K ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 02期

关键词：

D O I：

10.1063/1.1582394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical nonlinear properties of self-assembled InAs/GaAs quantum dots (QDs) were experimentally verified by means of transient absorption measurements. A saturation pulse energy P-s of 13 fJ/mum(2) and an absorption recovery time tau(r) of 55 ps were obtained from transmission bleaching and pump/probe measurements for a waveguide sample with ten-layer-stacked QDs. An absorption saturation intensity I-s of 2.5x10(4) W/cm(2), calculated from P-s and tau(r), was found. The saturation pulse energy is up to an order of magnitude smaller than, or at least comparable with, the reported values for excitons in quantum wells of III-V compound semiconductors. The dipole length, as calculated from the absorption cross section, is of the same order as the lattice constant of the InAs QDs. The results are expected to experimentally verify that QDs show a delta-function-like density of states. (C) 2003 American Institute of Physics.

引用

页码：1184 / 1189

页数：6

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