A Novel 100 ppm/°C current reference for ultra-low-power subthreshold applications

被引:0
作者
Indika, Bogoda A. [1 ]
Kanemoto, Daisuke [2 ]
Taniguchi, Kenji [1 ]
机构
[1] Osaka Univ, Div Elect Elect & Informat Engn, Suita, Osaka 5650871, Japan
[2] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Nishi Ku, Fukuoka 812, Japan
来源
IEICE ELECTRONICS EXPRESS | 2011年 / 8卷 / 03期
关键词
current reference; subthreshold; low-power; temperature coefficient; CMOS; CMOS CURRENT REFERENCE; TEMPERATURE;
D O I
10.1587/elex.8.168
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We proposed a novel temperature-compensated, ultra-low-power current reference based on two beta-multipliers whose resistors are replaced by nMOS devices operated in the deep triode region. The circuit, designed by a 0.25 mu m CMOS process, produces an output reference current of 13.7 nA at room temperature. Simulated results show that the temperature coefficient of the output is less than 100 ppm/degrees C in the range from -20 degrees C to 80 degrees C and the average power dissipation is 0.9 mu W.
引用
收藏
页码:168 / 174
页数:7
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