Effect of High Cobalt Concentration on Hopping Motion in Cobalt Manganese Spinel Oxide (CoxMn3-xO4, x ≥ 2.3)

被引:37
作者
Han, HyukSu [1 ]
Lee, Jae Seok [2 ]
Ryu, Jeong Ho [3 ]
Kim, Kang Min [4 ]
Jones, Jacob L. [5 ]
Lim, Jiun [6 ]
Guillemet-Fritsch, Sophie [7 ]
Lee, Han Chan [8 ]
Mhin, Sungwook [8 ]
机构
[1] Korea Inst Ind Technol, Gwahakdanji Ro 137-41, Gangneung Si 25440, Gangwond Do, South Korea
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Korea Natl Univ Transportat, Dept Mat Sci & Engn, Chungju 380702, South Korea
[4] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[5] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[6] Ajou Univ, Dept Mat Sci & Engn, World Cup Ro 206, Suwon 443749, Gyeonggi Do, South Korea
[7] Univ Toulouse 3, CNRS, Inst Carnot CIRIMAT, UMR CNRS UPS INP 5085, 118 Route Narbonne, F-31062 Toulouse 9, France
[8] Korea Inst Ind Technol, Gaetbeol Ro 156, Inchon 406840, South Korea
关键词
ELECTRICAL-PROPERTIES; CONDUCTION; CERAMICS;
D O I
10.1021/acs.jpcc.6b01440
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hopping motions in cobalt manganese spinel oxides with high cobalt concentration (CoxMn3-xO4, 2.3 <= x <= 2.7) are investigated in order to clarify the origin of unusual electrical behaviors as negative temperature coefficient (NTC) thermistors. Based on the resistance versus temperature (R-T) characteristics, hopping conduction mechanisms in MCO compounds (x = 2.3 and 2.5) are attributed to variable range hopping (VRH) motion with a parabolic distribution of the density of states (DOS) near the Fermi level. However, when Co content increases up to 2.7, transition in the hopping motion occurs from VRH to the nearest neighboring hopping (NNH) motion, which can be responsible for a huge increase of the resistance accompanied by decrease of the factor of thermal sensitivity (B value) in MCO compounds (x = 2.7). Also, hopping distance and activation energies for MCO (x = 2.3 and 2.5) compounds following VRH conduction are calculated as a function of temperature, indicating that higher B value observed in MCO (x = 2.5) compound is due to the larger hopping distance compared to that of MCO (x = 2.3) compound.
引用
收藏
页码:13667 / 13674
页数:8
相关论文
共 19 条
[1]   Structural variations and cation distributions in Mn3-xCoxO4 (0 ≤ x ≤ 3) dense ceramics using neutron diffraction data [J].
Bordeneuve, H. ;
Tenailleau, C. ;
Guillemet-Fritsch, S. ;
Smith, R. ;
Suard, E. ;
Rousset, A. .
SOLID STATE SCIENCES, 2010, 12 (03) :379-386
[2]   Structure and electrical properties of single-phase cobalt manganese oxide spinels Mn3-xCoxO4 sintered classically and by spark plasma sintering (SPS) [J].
Bordeneuve, Helene ;
Guillemet-Fritsch, Sophie ;
Rousset, Abel ;
Schuurman, Sophie ;
Poulain, Veronique .
JOURNAL OF SOLID STATE CHEMISTRY, 2009, 182 (02) :396-401
[3]   Cation distribution and mechanism of electrical conduction in nickel-copper manganite spinels [J].
Elbadraoui, E ;
Baudour, JL ;
Bouree, F ;
Gillot, B ;
Fritsch, S ;
Rousset, A .
SOLID STATE IONICS, 1997, 93 (3-4) :219-225
[4]   Variable Range Hopping Conduction in BaTiO3 Ceramics Exhibiting Colossal Permittivity [J].
Han, HyukSu ;
Davis, Calvin, III ;
Nino, Juan C. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (17) :9137-9142
[5]   Studies of temperature dependent ac impedance of a negative temperature coefficient Mn-Co-Ni-O thin film thermistor [J].
He, Lin ;
Ling, Zhiyuan .
APPLIED PHYSICS LETTERS, 2011, 98 (24)
[6]   CoFe2O4 and NiFe2O4 synthesized by sol-gel procedures for their use as anode materials for Li ion batteries [J].
Lavela, P. ;
Tirado, J. L. .
JOURNAL OF POWER SOURCES, 2007, 172 (01) :379-387
[7]   Sol-gel preparation of cobalt manganese mixed oxides for their use as electrode materials in lithium cells [J].
Lavela, P. ;
Tirado, J. L. ;
Vidal-Abarca, C. .
ELECTROCHIMICA ACTA, 2007, 52 (28) :7986-7995
[8]  
MANSFIELD R, 1991, HOPPING TRANSPORT SO
[9]  
Mott N. F., 2013, ELECT PROCESSES NONC
[10]   Mixed valency spinel oxides of transition metals and electrocatalysis:: case of the MnxCo3-xO4 system [J].
Rios, E ;
Gautier, JL ;
Poillerat, G ;
Chartier, P .
ELECTROCHIMICA ACTA, 1998, 44 (8-9) :1491-1497