Formation and electrical properties of Ni1-xFex nanocrystals embedded in a polyimide layers for applications as nonvolatile flash memories -: art. no. 032904

被引：50

作者：

Kim, JH ^{[1
]}

Jin, JY ^{[1
]}

Jung, JH ^{[1
]}

Lee, I ^{[1
]}

Kim, TW ^{[1
]}

Lim, SK ^{[1
]}

Yoon, CS ^{[1
]}

Kim, YH ^{[1
]}

机构：

[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 03期

关键词：

D O I：

10.1063/1.1850194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled Ni1-xFex nanoparticles embedded in a polyimide (PI) matrix were formed by curing Ni1-xFex thin films with PI precursor layers. Transmission electron microscopy images and selected area electron-diffraction patterns showed that Ni1-xFex nanocrystals were created inside the PI layer. Capacitance-voltage measurements on Al/PI/nanocrystalline Ni1-xFex/PI/n-Si structures at 300 K showed a metal-insulator-semiconductor behavior with a large flatband voltage shift due to the quantum confinement effect of the Ni1-xFex nanocrystals in spite of the possible existence of a thick tunnel PI layer, and conductance-voltage measurements showed a broad conductance peak around the flatband voltage. The present results suggest that self-assembled Ni1-xFex nanocrystals embedded in a PI layer hold promise for potential applications in nonvolatile. flash memories with floating gates consisting of Ni1-xFex nanocrystals embedded in a PI layer. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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