Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

被引：6

作者：

Alaie, S. ^{[1
]}

Baboly, M. G. ^{[2
]}

Jiang, Y-B ^{[3
]}

Rempe, S. ^{[6
]}

Anjum, D. H. ^{[7
]}

Chaieb, S. ^{[8
,9
,10
]}

Donovan, B. F. ^{[11
]}

Giri, A. ^{[12
]}

Szwejkowski, C. J. ^{[12
]}

Gaskins, J. T. ^{[12
]}

Elahi, M. M. M. ^{[4
]}

Goettler, D. F. ^{[5
]}

Braun, J. ^{[12
]}

Hopkins, P. E. ^{[12
,13
,14
]}

Leseman, Z. C. ^{[15
]}

机构：

[1] Cornell Univ, Dept Radiol, Weill Cornell Med, New York, NY 10065 USA

[2] Univ Jamestown, Dept Engn, Jamestown, ND 58405 USA

[3] Univ New Mexico, Dept Chem & Biol Engn, Albuquerque, NM 87131 USA

[4] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA

[5] Univ New Mexico, Dept Mech Engn, Albuquerque, NM 87131 USA

[6] Sandia Natl Labs, Albuquerque, NM 87123 USA

[7] King Abdullah Univ Sci & Technol, Adv Nanofabricat Imaging & Characterizat Lab, Thuwal 239556900, Saudi Arabia

[8] King Abdullah Univ Sci & Technol, Div Biol & Environm Sci & Engn, Thuwal 239556900, Saudi Arabia

[9] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[10] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[11] US Naval Acad, Dept Phys, Annapolis, MD 21402 USA

[12] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA 22904 USA

[13] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA

[14] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA

[15] Kansas State Univ, Dept Mech & Nucl Engn, Manhattan, KS 66506 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 43期

基金：

美国国家科学基金会;

关键词：

focused ion beam (FIB); thermal conductivity; gallium; irradiated; nanostructures; time-domain thermoreflectance (TDTR); GRAIN-GROWTH; SILICON; FILMS; LAYERS;

D O I：

10.1021/acsami.8b11949

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well understood nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >10(16) (Ga+/cm(2)), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.

引用

页码：37679 / 37684

页数：6

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