Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam

被引：6

作者：

Alaie, S. ^{[1
]}

Baboly, M. G. ^{[2
]}

Jiang, Y-B ^{[3
]}

Rempe, S. ^{[6
]}

Anjum, D. H. ^{[7
]}

Chaieb, S. ^{[8
,9
,10
]}

Donovan, B. F. ^{[11
]}

Giri, A. ^{[12
]}

Szwejkowski, C. J. ^{[12
]}

Gaskins, J. T. ^{[12
]}

Elahi, M. M. M. ^{[4
]}

Goettler, D. F. ^{[5
]}

Braun, J. ^{[12
]}

Hopkins, P. E. ^{[12
,13
,14
]}

Leseman, Z. C. ^{[15
]}

机构：

[1] Cornell Univ, Dept Radiol, Weill Cornell Med, New York, NY 10065 USA

[2] Univ Jamestown, Dept Engn, Jamestown, ND 58405 USA

[3] Univ New Mexico, Dept Chem & Biol Engn, Albuquerque, NM 87131 USA

[4] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA

[5] Univ New Mexico, Dept Mech Engn, Albuquerque, NM 87131 USA

[6] Sandia Natl Labs, Albuquerque, NM 87123 USA

[7] King Abdullah Univ Sci & Technol, Adv Nanofabricat Imaging & Characterizat Lab, Thuwal 239556900, Saudi Arabia

[8] King Abdullah Univ Sci & Technol, Div Biol & Environm Sci & Engn, Thuwal 239556900, Saudi Arabia

[9] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[10] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[11] US Naval Acad, Dept Phys, Annapolis, MD 21402 USA

[12] Univ Virginia, Dept Mech & Aerosp Engn, Charlottesville, VA 22904 USA

[13] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA

[14] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA

[15] Kansas State Univ, Dept Mech & Nucl Engn, Manhattan, KS 66506 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 43期

基金：

美国国家科学基金会;

关键词：

focused ion beam (FIB); thermal conductivity; gallium; irradiated; nanostructures; time-domain thermoreflectance (TDTR); GRAIN-GROWTH; SILICON; FILMS; LAYERS;

D O I：

10.1021/acsami.8b11949

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Focused ion beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however, are not well understood nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >10(16) (Ga+/cm(2)), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.

引用

页码：37679 / 37684

页数：6

共 49 条

[1] Thermal transport in phononic crystals and the observation of coherent phonon scattering at room temperature [J].

Alaie, Seyedhamidreza ;

Goettler, Drew F. ;

Su, Mehmet ;

Leseman, Zayd C. ;

Reinke, Charles M. ;

El-Kady, Ihab .

NATURE COMMUNICATIONS, 2015, 6

[2] Thermal conductivity and nanocrystalline structure of platinum deposited by focused ion beam [J].

Alaie, Seyedhamidreza ;

Goettler, Drew F. ;

Jiang, Ying-Bing ;

Abbas, Khawar ;

Baboly, Mohammadhosein Ghasemi ;

Anjum, D. H. ;

Chaieb, S. ;

Leseman, Zayd C. .

NANOTECHNOLOGY, 2015, 26 (08)

[3] Microfabricated suspended island platform for the measurement of in-plane thermal conductivity of thin films and nanostructured materials with consideration of contact resistance [J].

Alaie, Seyedhamidreza ;

Goettler, Drew F. ;

Abbas, Khawar ;

Su, Mehmet F. ;

Reinke, Charles M. ;

El-Kady, Ihab ;

Leseman, Zayd C. .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2013, 84 (10)

[4] Temperature-dependent thermal conductivity of single-crystal silicon layers in SOI substrates [J].

Asheghi, M ;

Touzelbaev, MN ;

Goodson, KE ;

Leung, YK ;

Wong, SS .

JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 1998, 120 (01) :30-36

[5] Upper limit to the thermal penetration depth during modulated heating of multilayer thin films with pulsed and continuous wave lasers: A numerical study [J].

Braun, Jeffrey L. ;

Hopkins, Patrick E. .

JOURNAL OF APPLIED PHYSICS, 2017, 121 (17)

[6] Size effects on the thermal conductivity of amorphous silicon thin films [J].

Braun, Jeffrey L. ;

Baker, Christopher H. ;

Giri, Ashutosh ;

Elahi, Mirza ;

Artyushkova, Kateryna ;

Beechem, Thomas E. ;

Norris, Pamela M. ;

Leseman, Zayd C. ;

Gaskins, John T. ;

Hopkins, Patrick E. .

PHYSICAL REVIEW B, 2016, 93 (14)

[7] Nanoscale thermal transport. II. 2003-2012 [J].

Cahill, David G. ;

Braun, Paul V. ;

Chen, Gang ;

Clarke, David R. ;

Fan, Shanhui ;

Goodson, Kenneth E. ;

Keblinski, Pawel ;

King, William P. ;

Mahan, Gerald D. ;

Majumdar, Arun ;

Maris, Humphrey J. ;

Phillpot, Simon R. ;

Pop, Eric ;

Shi, Li .

APPLIED PHYSICS REVIEWS, 2014, 1 (01)

[8] Thermal conductivity of epitaxial layers of dilute SiGe alloys [J].

Cahill, DG ;

Watanabe, F ;

Rockett, A ;

Vining, CB .

PHYSICAL REVIEW B, 2005, 71 (23)

[9] Thermal conductivity of isotopically pure and Ge-doped Si epitaxial layers from 300 to 550 K [J].

Cahill, DG ;

Watanabe, F .

PHYSICAL REVIEW B, 2004, 70 (23) :1-3

[10] Analysis of heat flow in layered structures for time-domain thermoreflectance [J].

Cahill, DG .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (12) :5119-5122

← 1 2 3 4 5 →