Polycrystalline silicon thin-film transistors on flexible steel foil substrates for complementary-metal-oxide-silicon technology

被引:1
作者
Wu, M
Sturm, JC
Wagner, S
机构
[1] Aegis Semicond Inc, Woburn, MA 01801 USA
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[3] Princeton Univ, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA
来源
POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS | 2003年 / 93卷
关键词
complementary metal-oxide-semiconductor circuit; polycrystalline silicon; steel foil substrate; thin-film transistor;
D O I
10.4028/www.scientific.net/SSP.93.3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We made complementary metal-oxide-silicon circuits from polycrystalline silicon thin film transistors on steel foil substrates. As-rolled steel foils can be planarized and electrically insulated with a combination of spin-on and plasma-deposited SiO2, which also functions as the barrier against contaminant diffusion. The processes at temperatures of up to 950degreesC include the furnace crystallization of amorphous silicon precursor films, thermal annealing of ion implants in self-aligned geometries, and thermal oxidation of the polycrystalline silicon film. Individual thin film transistors have reached electron and hole mobilities of 60 cm(2)V(-1)s(-1) and 15 cm(2)V(-1)s(-1), respectively. The propagation delay in ring oscillators is 1 mus per gate, and is determined by the channel resistance and the coupling capacitance between thin film transistor and substrate. Our work introduces polycrystalline silicon circuits on steel foil as a robust technology for flexible backplanes.
引用
收藏
页码:3 / 12
页数:10
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