InGaN-based laser diodes

被引：46

作者：

Nakamura, S ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1998年 / 28卷

关键词：

GaN; SQW; MQW; blue laser diodes; LEDs;

D O I：

10.1146/annurev.matsci.28.1.125

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Continuous-wave operation of InGaN multi-quantum-well (MQW) structure laser diodes (LDs) has been demonstrated at room temperature with output power up to 50 mW, operating temperature up to 100 degrees C, emission wavelength of 400-420 nm, and a lifetime up to 300 h. InGaN MQW LDs with a lifetime of more than 1000 h are expected soon. Commercialization will begin in 1998 if research on the bluish-purple InGaN-based laser diodes continues to progress. The stimulated emission of the InGaN-based LDs originates from localized energy states of 100-250 meV depth, which are equivalent to quantum dot energy states, probably arising from from InGaN composition fluctuation in the InGaN well layers.

引用

页码：125 / 152

页数：28

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