Temperature dependence of optical transitions in AlxGa1-xAs/GaAs quantum well structures grown by molecular beam epitaxy

被引：7

作者：

Caballero-Rosas, A

Mejía-García, C

Contreras-Puente, G

López-López, M

机构：

[1] IPN, Escuela Super Fis & Matemat, Mexico City 07738, DF, Mexico

[2] IPN, Dept Fis, CINVESTAV, Mexico City 07300, DF, Mexico

来源：

THIN SOLID FILMS | 2005年 / 490卷 / 02期

关键词：

AlGaAs/Gas; molecular beam epitaxy; photoluminescence; optical transitions;

D O I：

10.1016/j.tsf.2005.04.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Quantum well (QW) structures of AlxGa1-xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl-2-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 degrees C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Passler model. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：161 / 164

页数：4

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