Proposal of a miniaturized Orbitron pump for MEMS applications

被引:3
作者
Koops, HWP [1 ]
机构
[1] NaWoTec GmbH, Rossdorf, Germany
来源
Nanotechnology II | 2005年 / 5838卷
关键词
orbitron pump; field emitter; electron beam induced deposition; gas ionization; getter pump;
D O I
10.1117/12.627564
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The principle of the Orbitron pump is described. Its miniaturization is simulated. The application of such an ultra high vacuum pump is based on the availability of electron sources with good resistance against mbar vacuum levels. Especially field emitter cathodes are well suited to supply the active ionizing current. This electron current orbits around an anode. Ions generated along the electron path are extracted to the cathode. This is made from getter material e.g. titanium, which is sputtered by the impinging ions and in turn coats the internal surface of the pump. This generates an active getter film for chemical pumping. Employing a cathode - extractor separation smaller than I mu m allows to start the pump at a pressure as low as I mbar in the cavity. Using electron beam induced deposition, it was shown that a field emitter - extractor configuration can be built with dimensions of < 2 mu m in length, width and height. This miniaturized electron gun supplies the required current for the pump of e.g. 100 mu A. Employing micromechanical technologies, the Orbitron pump can be built and integrated into a MEMS device to supply UHV in a volume of < I Mio mu m(3) on a chip. Connecting the pump with a load vacuum volume, miniature electronic, optical, or mechanical devices, which require a continuous vacuum or even UHV, can be pumped down on chip and operated by only electrical controls.
引用
收藏
页码:38 / 42
页数:5
相关论文
共 11 条
[1]  
EDELMANN C, 1998, VAKUUMPHYSIK SPEKTRU
[2]  
EICHMEIER, 1989, HDB VAKUUMELEKTRONIK, P77
[3]   Operation of high power field emitters fabricated with electron beam deposition and concept of a miniaturised free electron laser [J].
Floreani, F ;
Koops, HW ;
Elsässer, W .
MICROELECTRONIC ENGINEERING, 2001, 57-8 :1009-1016
[4]  
HELY H, 1977, OPTIK, V49, P127
[5]  
HERB R, 1967, J VAC SCI TECHNOL, V5, P42
[6]  
KOOPES HWP, 1999, Patent No. 100063661
[7]  
KOOPS H, 2004, Patent No. 1403903
[8]   CHARACTERIZATION AND APPLICATION OF MATERIALS GROWN BY ELECTRON-BEAM-INDUCED DEPOSITION [J].
KOOPS, HWP ;
KRETZ, J ;
RUDOLPH, M ;
WEBER, M ;
DAHM, G ;
LEE, KL .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B) :7099-7107
[9]  
*MUNR EL BEAM SOFT, EO3D SIM SOFTW MEMBS
[10]   Nanostructured integrated electron source [J].
Schoessler, C ;
Koops, HWP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02) :862-865