Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors

被引：12
作者：
Li, Xuefei [1 ]
Li, Tiaoyang [1 ]
Zhang, Zhenfeng [1 ]
Xiong, Xiong [1 ]
Li, Sichao [1 ]
Wu, Yanqing [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Hubei, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 01期
基金：
中国国家自然科学基金;
关键词：
MoS2; dual-gate; low-frequency noise; transistors; high-k; FIELD-EFFECT TRANSISTORS; SINGLE; MOBILITY;
D O I：
10.1109/LED.2017.2771832
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have systematically studied the effect of the back-gate voltage on the low-frequency noise properties of the MoS2 transistors from 300 to 20 K in this work. The results show that the performance of the top-gate MoS2 transistor can be effectively tuned by the back-gate voltage V-bg. When Vbg increases to 20 V, the maximum on-current increases up to 588 mu A/mu m for the 1-mu m channel length device, as well as five times reduction of the low-frequency noise and two times reduction in contact resistance. The Fermi-level modulation by adjusting Vbg turns out to be an effective way of improving contact resistance and low-frequency noise for future high-quality MoS2 metal-oxide-semiconductor field-effect transistors.
引用
收藏
页码：131 / 134
页数：4
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