Tunable Low-Frequency Noise in Dual-Gate MoS2 Transistors

被引：12

作者：

Li, Xuefei ^{[1
]}

Li, Tiaoyang ^{[1
]}

Zhang, Zhenfeng ^{[1
]}

Xiong, Xiong ^{[1
]}

Li, Sichao ^{[1
]}

Wu, Yanqing ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Hubei, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 01期

基金：

中国国家自然科学基金;

关键词：

MoS2; dual-gate; low-frequency noise; transistors; high-k; FIELD-EFFECT TRANSISTORS; SINGLE; MOBILITY;

D O I：

10.1109/LED.2017.2771832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have systematically studied the effect of the back-gate voltage on the low-frequency noise properties of the MoS2 transistors from 300 to 20 K in this work. The results show that the performance of the top-gate MoS2 transistor can be effectively tuned by the back-gate voltage V-bg. When Vbg increases to 20 V, the maximum on-current increases up to 588 mu A/mu m for the 1-mu m channel length device, as well as five times reduction of the low-frequency noise and two times reduction in contact resistance. The Fermi-level modulation by adjusting Vbg turns out to be an effective way of improving contact resistance and low-frequency noise for future high-quality MoS2 metal-oxide-semiconductor field-effect transistors.

引用

页码：131 / 134

页数：4

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