Temperature dependence of ferroelectric and magnetic properties in polycrystalline BiFeO3 films

被引:0
|
作者
Naganuma, Hiroshi [1 ]
Inoue, Yosuke [1 ]
Okamura, Soichiro [1 ]
机构
[1] Tokyo Univ Sci, Dept Appl Phys, Shinjuku Ku, Tokyo 1628601, Japan
来源
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年
关键词
D O I
10.1109/ISAF.2007.4393289
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A BiFeO3 film was fabricated by a chemical solution deposition (CSD) method onto the Pt/Ti/SiO2/Si(100) substrate followed by a post-deposition annealing at 973 K for 10 min in air. An x-ray diffraction measurement indicates the formation of the polycrystalline single phase of the BiFeO3 film. The high remanent polarization of 89 mu C/cm(2) was observed at 90 K together with the relatively low electric coercive field of 380 kV/cm, though the ferroelectric hysteresis loops could not be observed at room temperature due to the high leakage current density. Magnetic measurements indicate that the low remanence magnetization of around 2 emu/cm(3) and the magnetic coercivity field of around 0.5 kOe were obtained at room temperature. These magnetic parameters increased around twice the value by decreasing the temperature to 100 K.
引用
收藏
页码:431 / 433
页数:3
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