Scintillation Characteristic of In, Ga-Doped ZnO Thin Films with Different Dopant Concentrations

被引：22

作者：

Fujimoto, Yutaka ^{[1
,2
]}

Yanagida, Takayuki ^{[1
]}

Sekiwa, Hideyuki ^{[4
]}

Yokota, Yuui ^{[1
]}

Chani, Valery ^{[1
]}

Yoshikawa, Akira ^{[1
,3
]}

机构：

[1] Tohoku Univ, IMRAM, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] JSPS, Chiyoda Ku, Tokyo 1028472, Japan

[3] Tohoku Univ, NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan

[4] Mitsubishi Gas Chem Co Inc, Tokyo 1250051, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 01期

关键词：

TIME-OF-FLIGHT; BAF2; CRYSTALS; TOF-PET; LUMINESCENCE; IMPROVEMENT; RESOLUTION; SYSTEM;

D O I：

10.1143/JJAP.50.01BG04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In3+- and Ga3+-doped ZnO thin films with different dopant concentrations. In3+-( 25, 55, and 141 ppm) and Ga3+-( 33, 67, 333, and 1374 ppm) doped ZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In3+ and Ga3+ in the films. However, the scintillation light yield under Am-241 alpha-ray excitation reduced when concentration of In3+ and Ga3+ in the ZnO films was high. (c) 2011 The Japan Society of Applied Physics

引用

页数：4

共 20 条

[1]

ANGER HO, 1966, T ISA, V5, P311

[2] Development of ZnO:Ga as an ultra-fast scintillator [J].

Bourret-Courchesne, E. D. ;

Derenzo, S. E. ;

Weber, M. J. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 601 (03) :358-363

[3] Performance study of a 3D small animal PET scanner based on BaF2 crystals and a photo sensitive wire chamber [J].

Bruyndonckx, P ;

Liu, XA ;

Tavernier, S ;

Zhang, SP .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 392 (1-3) :407-413

[4] Scintillation properties of ceramics based on zinc oxide [J].

Demidenko, Vladimir A. ;

Gorokhova, Elena I. ;

Khodyuk, Ivan V. ;

Khristicha, Ol'ga A. ;

Mikhrin, Sergey B. ;

Rodnyi, Piotr A. .

RADIATION MEASUREMENTS, 2007, 42 (4-5) :549-552

[5] IMPROVEMENT OF TIME RESOLUTION IN A TOF PET SYSTEM WITH THE USE OF BAF2 CRYSTALS [J].

ISHII, K ;

WATANUKI, S ;

ORIHARA, H ;

ITOH, M ;

MATSUZAWA, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 253 (01) :128-134

[6] PROPERTIES OF BAF2 SCINTILLATOR WORKING WITH P-TERPHENYL WAVELENGTH SHIFTER [J].

KLAMRA, W ;

LINDBLAD, T ;

MOSZYNSKI, M ;

NORLIN, LO ;

WEIMER, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 265 (03) :485-489

[7] EDGE EMISSION OF N-TYPE CONDUCTING ZNO AND CDS [J].

LEHMANN, W .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1107-&

[8] Fast, high-efficiency, and homogeneous room-temperature cathodoluminescence of ZnO scintillator thin films on sapphire [J].

Lorenz, M. ;

Johne, R. ;

Nobis, T. ;

Hochmuth, H. ;

Lenzner, J. ;

Grundmann, M. ;

Schenk, H. P. D. ;

Borenstain, S. I. ;

Schon, A. ;

Bekeny, C. ;

Voss, T. ;

Gutowski, J. .

APPLIED PHYSICS LETTERS, 2006, 89 (24)

[9] Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga [J].

Makino, T ;

Segawa, Y ;

Yoshida, S ;

Tsukazaki, A ;

Ohtomo, A ;

Kawasaki, M .

APPLIED PHYSICS LETTERS, 2004, 85 (05) :759-761

[10]

MCDONALD DF, 1960, IRE T NUCLEAR SCIENC, VNS7, P17

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