High performance 3-d helical RF transformers

被引：0

作者：

Weon, Dae-Hee ^{[1
]}

Mohammadi, Saeed ^{[1
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年

关键词：

high coupling coefficient; high power efficiency; high frequency; RF transformers; stressed metal technology; three dimensional fabrication;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have designed, fabricated, and tested 3-dimensional helical RF transformers on high-resistivity Si substrate using stressed metal technology [1]. The technology for these transformers is based on one step Cr/Au metal deposition and electroplating. These transformers exhibit high coupling coefficient and high power efficiency over an extended frequency range. A 4:4 turn ratio transformer in this work achieves a coupling coefficient k of 0.84 at 5 GHz, with k over 0.7 for frequencies from 1.6 to 6.6 GHz and with P(out)/P(in) over 75% up to 20GHz.

引用

页码：1888 / 1891

页数：4

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