Comparative investigation of gate leakage current in single and double channel InP HEMT

被引：10

作者：

Ladner, C ^{[1
]}

Berthelemot-Aupetit, C ^{[1
]}

Nezzari, A ^{[1
]}

Decobert, J ^{[1
]}

Harmand, JC ^{[1
]}

Post, G ^{[1
]}

Vigier, P ^{[1
]}

Dumas, JM ^{[1
]}

机构：

[1] CNET, France Telecom, DTD, F-92225 Bagneux, France

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The InP HEMT is a key electron device for monolithic optoelectronic integration. However, the additional gate current due to impact ionization in the low band-gap InGaAs channel is a serious limitation for photoreceiver applications and for high breakdown voltage. In order to overcome this limitation InGaAs/InP double channel HEMT[1] (DC HEMT) have been fabricated, characterised and compared with InGaAs single channel HEMT (SC HEMT). As expected the gate leakage current is much lower for the DC HEMT, A physical quasi-2D simulation supports this improved behaviour and shows that the gate leakage current peak is about four orders of magnitude lower for the DC HEMT than for the SC HEMT. This is verified for different gate lengths, even though the drain current for the DC HEMT is two times higher than that of the SC HEMT.

引用

页码：505 / 508

页数：4

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