Dependence of the structure and magnetic properties of FeTaN films on nitrogen concentration

The structural morphology and magnetic properties of thin FeTaN films with a high Ta content (10 wt %) prepared by annealing compounds deposited by reactive rf magnetron sputtering in an Ar + N gas mixture are studied. The dependence of the properties of FeTaN films on their nitrogen content and annealing temperature were established. The deposition and thermal treatment regimes favoring the preparation of thin nanostructural FeTaN films with hi oh soft magnetic characteristics [B-s = 1.6 T, H-c = 0.2 Oe, and mu(1) (1 MHz) 3400] were determined. (c) 2005 Pleiades Publishing, Inc.