Optical And Mass Spectrometric Investigation Of The Interaction Of Hydrogen With Nitrogen In (In)GaAsN Layers

被引：0

作者：

Alt, H. Ch. ^{[1
]}

Messerer, P. ^{[1
]}

Kirste, L. ^{[2
]}

Koehler, K. ^{[2
]}

Riechert, H. ^{[3
]}

机构：

[1] Univ Appl Sci, Dept Engn Phys, Lothstr 34, D-80335 Munich, Germany

[2] Fraunhofer Inst IAF, D-79108 Freiburg, Germany

[3] Paul Drude Inst, D-10117 Berlin, Germany

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

关键词：

dilute nitrides; hydrogen passivation; infrared spectroscopy; local vibrational modes; mass spectrometry;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fourier transform infrared absorption spectroscopy and secondary ion mass spectroscopy have been carried out on GaAs based dilute nitride layers after treatment with H+ or D+ ions. Formation of N-H (D-H) centers is detected by vibrational absorption bands of H (D). The modes are assigned to two different complexes, each involving one H (D) atom. A major fraction of the hydrogen in the layers might be not or only loosely bound to nitrogen.

引用

页码：87 / +

页数：2

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