Optical And Mass Spectrometric Investigation Of The Interaction Of Hydrogen With Nitrogen In (In)GaAsN Layers

被引:0
|
作者
Alt, H. Ch. [1 ]
Messerer, P. [1 ]
Kirste, L. [2 ]
Koehler, K. [2 ]
Riechert, H. [3 ]
机构
[1] Univ Appl Sci, Dept Engn Phys, Lothstr 34, D-80335 Munich, Germany
[2] Fraunhofer Inst IAF, D-79108 Freiburg, Germany
[3] Paul Drude Inst, D-10117 Berlin, Germany
来源
PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷
关键词
dilute nitrides; hydrogen passivation; infrared spectroscopy; local vibrational modes; mass spectrometry;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fourier transform infrared absorption spectroscopy and secondary ion mass spectroscopy have been carried out on GaAs based dilute nitride layers after treatment with H+ or D+ ions. Formation of N-H (D-H) centers is detected by vibrational absorption bands of H (D). The modes are assigned to two different complexes, each involving one H (D) atom. A major fraction of the hydrogen in the layers might be not or only loosely bound to nitrogen.
引用
收藏
页码:87 / +
页数:2
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