Emerging research logic devices

被引：51
作者：
Zhirnov, VV [1 ]
Hutchby, JA
Bourianoff, GI
Brewer, JE
机构：
[1] Semicond Res Corp, Durham, NC USA
[2] Intel Corp, Hillsboro, OR 97124 USA
[3] Univ Florida, Gainesville, FL USA
来源：
IEEE CIRCUITS & DEVICES | 2005年 / 21卷 / 03期
关键词：
D O I：
10.1109/MCD.2005.1438811
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The rapid pace of metal-oxide semiconductor field-effect transistor (MOSFET) scaling is accelerating introduction of new technologies to extend complementary metal-oxide semiconductors (CMOSs) beyond the 45-nm node. This paper outlines alternative concepts for logic that would, if successful, substantially extend the International Technology Roadmap for Semiconductors (ITRS) beyond CMOS. Focus is on device operation principles, advantages, challenges, maturity, and current and projected performance.
引用
收藏
页码：37 / 46
页数：10
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