Compact Formulation for the Bias Dependent Quasi-Static Mobile Charge in Schottky-Barrier CNTFETs

被引：2

作者：

Annamalai, Manojkumar ^{[1
]}

Schroeter, Michael ^{[1
]}

机构：

[1] Tech Univ Dresden, Chair Electron Devices & Integrated Circuits CEDI, D-01069 Dresden, Germany

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2021年 / 20卷

关键词：

Electron tubes; CNTFETs; Logic gates; Integrated circuit modeling; Charge carrier density; Circuit synthesis; Three-dimensional displays; Carbon nanotube field-effect transistor; compact modeling; FET charge modeling; PART I; CARBON; MODEL;

D O I：

10.1109/TNANO.2021.3116694

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon nanotube (CNT) field-effect transistors (FETs) are promising candidates for future high-frequency (HF) system-on-chip applications. Understanding and modeling mobile charge storage on CNTs is therefore essential for device optimization and circuit design. A physics-based compact analytical formulation is presented that enables an accurate approximation of the mobile charge in Schottky-barrier CNTFETs over the practically relevant bias range for HF circuit design. The formulation is C-infinity continuous and yields accurate results also for the capacitances. The new formulation has been verified for both ballistic and scattering dominated carrier transport by employing device simulation, which was calibrated to experimental data from multi-tube CNTFETs

引用

页码：754 / 760

页数：7

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