Stoichiometry-induced roughness on antimonide growth surfaces

被引：8

作者：

Bracker, AS ^{[1
]}

Nosho, BZ ^{[1
]}

Barvosa-Carter, W ^{[1
]}

Whitman, LJ ^{[1
]}

Bennett, BR ^{[1
]}

Shanabrook, BV ^{[1
]}

Culbertson, JC ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 17期

关键词：

D O I：

10.1063/1.1366360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phase shifts in the intensity oscillation of reflection high-energy electron diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry. High-resolution scanning tunneling microscopy confirms the interpretation of the phase shift. These results are consistent with a previous structural assignment of the AlSb beta (4x3) and alpha (4x3) surface reconstructions and provide guidelines for producing smooth interfaces in antimonide-based heterostructures.

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收藏

页码：2440 / 2442

页数：3

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