High Temperature Resistant Bonding Solutions Enabling Thin Wafer Processing (Characterization of Polyimide Base Temporary Bonding Adhesive for Thinned Wafer Handling)

被引：21

作者：

Itabashi, Toshiaki ^{[1
]}

Zussman, Melvin P. ^{[2
]}

机构：

[1] DuPont WLP Solut, KSP R&D D342, Takatsu Ku, 3-2-1 Sakado, Kawasaki, Kanagawa 2130012, Japan

[2] Hitachi Chem DuPont MicroSyst HD MicroSyst, DuPont Expt Stn, Wilmington, DE 19880 USA

来源：

2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2010年

关键词：

D O I：

10.1109/ECTC.2010.5490702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent advanced devices including packaging and substrates required smart solution for wafer thinning and handling techniques. In addition to 3D-TSV packages, CIS, SiP, power devices, MEMS and SI interposer technologies require thinned substrates without any damage during processing or handling. On the other hand, existing thinning and handling technologies face difficulties when high process temperatures or aggressive chemicals are used in processes for via formation, insulation, via filling and re-routings. We propose the use of high temperature- and chemical-resistant polyimides as both temporary and permanent bonding adhesives in a process sequence called "transfer bonding"; this technology eliminates the difficulty of handling thinned substrates. This paper describes details of the bonding process, several techniques for de-bonding and the potential for applying this technology to manufacture of multiple types of advanced devices.

引用

页码：1877 / 1880

页数：4