Effect of nitrogen doping temperature on the resistance stability of ITO thin films

被引：36

作者：

Yang, Shenyong ^{[1
]}

Zhang, Congchun ^{[1
]}

Yang, Zhuoqing ^{[1
]}

Yao, Jinyuan ^{[1
]}

Wang, Hong ^{[1
]}

Ding, Guifu ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Natl Key Lab Sci & Technol Micro Nano Fabricat, 800 Dongchuan Rd, Shanghai 200240, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 778卷

关键词：

ITO thin film; High-temperature strain gages; Nitrogen doping; Resistance stability; TRANSPARENT;

D O I：

10.1016/j.jallcom.2018.11.126

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium tin oxide (ITO) thin films were fabricated by magnetron sputtering in the mixture of argon and oxygen. Nitrogen doping was achieved by a two-step annealing process. It was found that with increasing temperature of the first-step treatment in N-2 atmosphere up to 800 degrees C, more nitrogen was doped into ITO thin films. After subsequent second-step annealing in air at 1200 degrees C, the ITO thin films had the most stable grain size and the highest content Sn4+ donors. This makes ITO thin film subjected to annealing in N-2 at 800 degrees C have the excellent resistance stability for high temperature (1200 degrees C) strain measurement. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：90 / 96

页数：7

共 39 条

[1] Structural and electronic properties of SnO2 [J].

Akgul, Funda Aksoy ;

Gumus, Cebrail ;

Er, Ali O. ;

Farha, Ashraf H. ;

Akgul, Guvenc ;

Ufuktepe, Yuksel ;

Liu, Zhi .

JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 579 :50-56

[2] Indium nitride (InN): A review on growth, characterization, and properties [J].

Bhuiyan, AG ;

Hashimoto, A ;

Yamamoto, A .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808

[3] Fabrication of Highly Transparent and Conductive Indium-Tin Oxide Thin Films with a High Figure of Merit via Solution Processing [J].

Chen, Zhangxian ;

Li, Wanchao ;

Li, Ran ;

Zhang, Yunfeng ;

Xu, Guoqin ;

Cheng, Hansong .

LANGMUIR, 2013, 29 (45) :13836-13842

[4] HIGH-TEMPERATURE BEHAVIOR OF IN2O3 [J].

DEWIT, JHW .

JOURNAL OF SOLID STATE CHEMISTRY, 1975, 13 (03) :192-200

[5] High temperature measurement set-up for the electro-mechanical characterization of robust thin film systems [J].

Fricke, S. ;

Friedberger, A. ;

Seidel, H. ;

Schmid, U. .

MEASUREMENT SCIENCE AND TECHNOLOGY, 2014, 25 (01)

[6] A robust pressure sensor for harsh environmental applications [J].

Fricke, S. ;

Friedberger, A. ;

Seidel, H. ;

Schmid, U. .

SENSORS AND ACTUATORS A-PHYSICAL, 2012, 184 :16-21

[7] Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films [J].

Frischbier, Mareike V. ;

Wardenga, Hans F. ;

Weidner, Mirko ;

Bierwagen, Oliver ;

Jia, Junjun ;

Shigesato, Yuzo ;

Klein, Andreas .

THIN SOLID FILMS, 2016, 614 :62-68

[8] Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films [J].

Gartner, M. ;

Stroescu, H. ;

Marin, A. ;

Osiceanu, P. ;

Anastasescu, M. ;

Stoica, M. ;

Nicolescu, M. ;

Duta, M. ;

Preda, S. ;

Aperathitis, E. ;

Pantazis, A. ;

Kampylafka, V. ;

Modreanu, M. ;

Zaharescu, M. .

APPLIED SURFACE SCIENCE, 2014, 313 :311-319

[9] High temperature stability of indium tin oxide thin films [J].

Gregory, OJ ;

Luo, Q ;

Crisman, EE .

THIN SOLID FILMS, 2002, 406 (1-2) :286-293

[10] Stability and Microstructure of Indium Tin Oxynitride Thin Films [J].

Gregory, Otto J. ;

Amani, Matin ;

Tougas, Ian M. ;

Drehman, Alvin J. .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2012, 95 (02) :705-710

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