III-Nitride Semiconductor Photoelectrodes

被引：3
作者：
Fujii, Katsushi [1 ,2 ]
机构：
[1] Univ Kitakyushu, Inst Environm Sci & Technol, Kitakyushu, Fukuoka, Japan
[2] RIKEN Ctr Adv Photon, Wako, Saitama, Japan
来源：
SEMICONDUCTORS FOR PHOTOCATALYSIS | 2017年 / 97卷
关键词：
N-TYPE GAN; P-TYPE GAN; HYDROGEN GENERATION; ELECTROLYTES; STABILITY; POTENTIALS; PHOTOANODE; EFFICIENCY; FLUX;
D O I：
10.1016/bs.semsem.2017.03.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：139 / 183
页数：45
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