W-band InP DHBT MMIC Power Amplifier

被引：0
|
作者：
Gu, Guohua [1 ,2 ]
Wang, Lei [1 ]
Wang, Weibo [2 ]
Cheng, Wei [2 ]
Wang, Yuan [2 ]
Lu, Haiyan [2 ]
Li, Oupeng [1 ]
Zhang, Jian [1 ]
Zhang, Yong [1 ]
机构：
[1] Univ Elect Sci & Technol China, Fundamental Sci EHF Lab, Chengdu 611731, Peoples R China
[2] Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1 mu m InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2x1 mu m and 3 stages 4x1 mu m emitter width transistors. The total circuit shows small signal gain is above 15dB from 90GHz to 96GHz, and the simulated saturation output power reaches 18.5dBm@94GHz. The chip area is only 1.61mmx1.03mm. This W-band power amplifier MMIC is now being fabricated in progress on the NEDI compound semiconductor process line.
引用
收藏
页码：600 / 602
页数：3
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