Non-Volatile Reconfigurable Silicon Photonics Based on Phase-Change Materials

被引:91
作者
Fang, Zhuoran [1 ]
Chen, Rui [1 ]
Zheng, Jiajiu [1 ]
Majumdar, Arka [1 ,2 ]
机构
[1] Univ Washington, Dept Elect & Comp Engn, Seattle, WA 98195 USA
[2] Univ Washington, Dept Phys, Seattle, WA 98195 USA
基金
美国国家卫生研究院; 美国国家科学基金会;
关键词
Phase change materials; Optical switches; Optical variables control; Optical refraction; Pulse modulation; Bonding; Silicon photonics; silicon photonics; reconfigurable photonics; THERMAL-PROPERTIES; OPTICAL DISK; POWER; GRAPHENE; CHIP;
D O I
10.1109/JSTQE.2021.3120713
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The traditional ways of tuning a silicon photonic network are mainly based on the thermo-optic effect or the free carrier dispersion. The drawbacks of these methods are the volatile nature and the extremely small change in the complex refractive index (Delta n<0.001). In order to achieve low energy consumption and smaller footprint for applications such as photonic memories, optical computing, programmable gate array, and optical neural network, it is essential that the two optical states of the system exhibit high optical contrast and remain non-volatile. Phase change materials (PCMs) such as Ge2Sb2Te5 provide an excellent solution, thanks to the drastic contrast in refractive index between two states which can be switched reversibly and in a non-volatile fashion. Here, we review the recent progress in the field of non-volatile reconfigurable silicon photonics based on PCMs. We start with a general introduction to the material properties of PCMs that have been exploited in integrated photonics and discuss their operating wavelengths. The various photonic switches that are built upon these PCMs are reviewed. Lastly, we review the recent applications of PCM-based photonic integrated circuits and discuss the potential future directions of this field.
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页数:17
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