Thickness-Dependent Hydroxylation of MgO(001) Thin Films

被引:54
|
作者
Carrasco, Esther [1 ]
Brown, Matthew A. [1 ]
Sterrer, Martin [1 ]
Freund, Hans-Joachim [1 ]
Kwapien, Karolina [2 ]
Sierka, Marek [2 ]
Sauer, Joachim [2 ]
机构
[1] Fritz Haber Inst Max Planck Gesellschaft, Dept Chem Phys, D-14195 Berlin, Germany
[2] Humboldt Univ, Dept Chem, D-10099 Berlin, Germany
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 42期
关键词
DENSITY-FUNCTIONAL THEORY; TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; WATER DISSOCIATION; AB-INITIO; ELECTRONIC-STRUCTURE; AMBIENT CONDITIONS; MGO(100) SURFACES; AQUEOUS-SOLUTIONS; MGO SURFACE;
D O I
10.1021/jp105294e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hydroxylation of MgO surfaces has been studied from UHV to mbar pressure for MgO(001) films of different thickness grown on Ag(001) by X-ray photoelectron spectroscopy, infrared reflection absorption spectroscopy, and density functional theory calculations. In agreement with earlier studies on MgO(001) single crystals, a threshold water pressure on the order of 10(-4) mbar is found for extensive hydroxylation of thick, bulklike MgO films. Decreasing the MgO film thickness shifts the threshold pressure to lower values, being 10(-6) mbar in the limit of 2 monolayer MgO(001)/Ag(001). This result is explained on the basis of the precursor state of periclase MgO(001) dissolution involving hydrolysis of Mg-O surface bonds. The enhanced structural flexibility (polaronic distortion) of the ultrathin MgO film facilitates surface hydroxylation by lowering the barrier for hydrolysis.
引用
收藏
页码:18207 / 18214
页数:8
相关论文
共 50 条
  • [1] Epitaxial τ phase MnAl thin films on MgO (001) with thickness-dependent magnetic anisotropy
    Cui, Yishen
    Yin, Wenjing
    Chen, Wei
    Lu, Jiwei
    Wolf, Stuart A.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (10)
  • [2] Thickness-dependent strain in epitaxial MgO layers on Ag(001)
    Valeri, S
    Altieri, S
    di Bona, A
    Luches, P
    Giovanardi, C
    Moia, TS
    SURFACE SCIENCE, 2002, 507 : 311 - 317
  • [3] Thickness-dependent optical properties of ZnO thin films
    L. Miao
    S. Tanemura
    M. Tanemura
    S. P. Lau
    B. K. Tay
    Journal of Materials Science: Materials in Electronics, 2007, 18 : 343 - 346
  • [5] Thickness-dependent phase transition in thin nematic films
    Wittebrood, MM
    Luijendijk, DH
    Stallinga, S
    Rasing, T
    Musevic, I
    PHYSICAL REVIEW E, 1996, 54 (05): : 5232 - 5234
  • [6] REINTERPRETATION OF THICKNESS-DEPENDENT CONDUCTIVITY OF THIN PLATINUM FILMS
    MESSAADI, S
    PICHARD, C
    TOSSER, AJ
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1986, 5 (09) : 873 - 875
  • [7] Thickness-dependent optical properties of ZnO thin films
    Miao, L.
    Tanemura, S.
    Tanemura, M.
    Lau, S. P.
    Tay, B. K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (Suppl 1) : S343 - S346
  • [8] Thickness-dependent relaxation of NiO(001) overlayers on MgO(001) studied by X-ray diffraction
    James, MA
    Hibma, T
    SURFACE SCIENCE, 1999, 433 : 718 - 722
  • [9] Thickness-dependent magnetoelasticity and its effects on perpendicular magnetic anisotropy in Ta/CoFeB/MgO thin films
    Gowtham, P. G.
    Stiehl, G. M.
    Ralph, D. C.
    Buhrman, R. A.
    PHYSICAL REVIEW B, 2016, 93 (02)
  • [10] Thickness-dependent twinning evolution and ferroelectric behavior of epitaxial BiFeO3 (001) thin films
    Liu, Huajun
    Yao, Kui
    Yang, Ping
    Du, Yonghua
    He, Qing
    Gu, Yueliang
    Li, Xiaolong
    Wang, Sisheng
    Zhou, Xingtai
    Wang, John
    PHYSICAL REVIEW B, 2010, 82 (06):