Second-order nonlinear effects in InGaAsP waveguides for efficient wavelength conversion to the mid-infrared

被引:0
|
作者
Ulsig, Emil Z. [1 ]
Volet, Nicolas [1 ]
机构
[1] Aarhus Univ, Dept Elect & Comp Engn, Finlandsgade 22, DK-8200 Aarhus N, Denmark
关键词
Integrated nonlinear photonics; InP; InGaAsP; DFG; Second-order susceptibility; mid-IR; Spectroscopy; 2ND HARMONIC-GENERATION; 2ND-HARMONIC GENERATION; SEMICONDUCTORS; LASERS; INP;
D O I
10.1117/12.2581819
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Simulations predict perfect phasematching for difference frequency generation (DFG) in a nonlinear ridge waveguide. It makes use of InGaAsP lattice-matched to InP as a nonlinear ridge waveguide. Both crystals possess high second-order susceptibility chi((2)) and low loss, making them ideal for second-order nonlinear effects. The design allows two lasers in the telecom spectrum to interact in the nonlinear waveguide and emit in the mid-infrared (mid-IR). The InGaAsP ridge waveguide heterogeneously integrated on silicon-rich silicon nitride achieves phasematching, resulting in a conversion efficiency eta = 4.5%/W.
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页数:9
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